Q.
Consider a silicon p-n junction solar cell of area 4cm2. If the doping of the solar cell are NA =1.0x1016cm-3 and ND = 1.5x1019 cm-3 and givenτn = 10 μs, τp = 0.5 μs, Dn = 9.3 cm2 /s, Dp = 2.5 cm2 /s and IL =95 mA, (a) calculate and plot the I-V characteristics of the solarcell, (b) calculate the open-circuit voltage and (c) determine themaximum output power of the solar cell, all at roomtemperature.
