Q1 The mobility of carriers in a lightly doped silicon sample will decrease if : Select one: a. The...

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Physics

Q1

The mobility of carriers in a lightly doped silicon sample willdecrease if :

Select one:

a. The sample is doped N-type instead of P-type

b. None of these

c. All of these

d. The temperature is increased

e. The number of dopant atoms is decreased

Q2

Electron mobility in silicon is typically lower than holemobility.

Select one:

True

False

Q3 If a P-type silicon sample with a hole mobility of 370cm^2/Vs has an electric field of 18558 V/cm applied to it, thenwhat is the magnitude of the hole drift velocity in cm/s?

Q4

Which of the following is true?

Select one:

a. Indirect band gap semiconductors recombine through deep trapsin the band gap caused by impurities

b. Indirect band gap semiconductors can radiate energy in theform of light to recombine

c. The recombination time for an indirect band gap semiconductorcan vary from 10 milliseconds to 1 second

d. None of these

e. Gallium Arsenide (GaAs) has an indirect band gap, whileSilicon (Si) has a direct band gap

Q5

The average time a carrier travels between collisions in thecrystal is typically less than a picosecond.

Select one:

True

False

Answer & Explanation Solved by verified expert
4.0 Ratings (498 Votes)
1 Mobility of carriers refers to both electron and holemobility Thus in lightly doped silicona P type and N type doping will result in mobility of hole andelectron respectively Thus the option Sample is doped Ntypeinstead of Ptype is notcorrectd In semiconductor there temperature dependence of mobility isdue to impurity scattering and lattice scattering In impurityscattering free electron gets scattered with impurity    See Answer
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