Pure Si at 500 K has equal number of electron n and hole n concentrations...
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Pure Si at 500 K has equal number of electron n and hole n concentrations of 1 5 10 6 m Doping by indium increases n to 4 5 10 m The doped semiconductor is of h 1 p type having electron concentration n 5 x 10 m e 2 n type with electron concentration n 5 x 1022 m e 3 p type with electron concentration n 2 5 x 10 0 m e 4 n type with electron concentration 25 x 1023 m 3 n
Pure Si at 500 K has equal number of electron n and hole n concentrations of 1 5 10 6 m Doping by indium increases n to 4 5 10 m The doped semiconductor is of h 1 p type having electron concentration n 5 x 10 m e 2 n type with electron concentration n 5 x 1022 m e 3 p type with electron concentration n 2 5 x 10 0 m e 4 n type with electron concentration 25 x 1023 m 3 n
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