MOS Capacitor. If i have a MOS capactitor with: tox=0,1 µm,T=300 K, ND= 1015cm-3 . Supposingideal contact, and null flat band potential VFB=0 V. Howdo I find the substratum electric potential (φn)?
How do I obtain the depletion region width in micrometers whenthe surface potential of the interface between Silicon and Oxideφ(x=0) =φS its equal to reverse substrate potential(φS= - φn)? Is there an electric fieldEs under the same condition of (φS= -φn) ?
Can VGB=VT in (φS= -φn)?
