Hobbis et al ( Inorg Chem ,2019, 58 (3), pp 18261833) thoroughly exa...

Hobbis et al (Inorg. Chem., 2019, 58 (3), pp 1826â€“1833) thoroughly examined the properties of a niobium-iron-antimony...

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Hobbis et al (Inorg. Chem.,2019, 58 (3), pp 1826â€“1833) thoroughly examined the properties of aniobium-iron-antimony semiconductor material. Although theirreported synthetic procedure was a fairly straightforwardstoichiometric melting and subsequent crystallization of the pureelements, they did not observe the predicted behavior of anintrinsic semiconductor. Instead, their compound was found toexhibit characteristics of a very lightly n-doped semiconductorinstead. They hypothesize that this is due to the formation ofso-called â€œantiphase domainsâ€ during crystallization, where thelocal pattern of atoms in small regions in the solid is the exactreverse of the rest of the crystal structure. Given the threeelements involved, suggest an explanation (using a diagram if youfind it helpful) for how this change in atomic pattern gives riseto n-type doping behavior.

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4.2 Ratings (648 Votes)

According to my knowledge this must be the answer The requiredgraphs and conclusions that are drawn are in the form ofimagesCharge doping in a semiconductor is takento originate thepresence of dopants elements that are not present in the originalcompound effectively adds and subtracts charge from the dispersivecomponent of electronic structure that yields n type and p typedoping In another See Answer

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