electron and hole of an intrinsic semiconductor of Germanium
(Ge) each is 0.39 and 0.19 m^2/V.s
a....
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Physics
electron and hole of an intrinsic semiconductor of Germanium(Ge) each is 0.39 and 0.19 m^2/V.s
a. find the concentration of the carrier and Ge conductivity at300 K if the gap energy of Ge is 0.67 eV and the effective mass ofelectron and hole is 0.55 m0 and 0.37m0 respectively. where m0 isthe mass of a still electron)
b. calculate the doping concentration (in m^-3) that must beadded to Ge so that the conductivity increase up to 10^4 times
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