Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration Nd...

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Electrical Engineering

Design an ideal abrupt silicon PN-junction at 300 K such thatthe donor impurity concentration Nd (in cm^?3 ) in n-side is Nd =5×10^15 /cm3 and the acceptor impurity concentration Na in thep-side is Na = 817 ×10^15 /cm3

Given: the diode area A = 2×10^?3 cm2 , ni = 10^10/cm3 , ?n =10^?8 s and ?p = 10^?7 s,

Refer to text books, lecture notes, etc for other parameterssuch Dn, etc., and state clearly in your work.

1. What are the values (in µm) of the depletion width at thep-side of the junction xp0 and the depletion width at the n-sidexn0.

Determine the following when a forward bias of 0.6 V is appliedto the diode:

2. Minority carrier hole diffusion current ,Ip(xno) at the spacecharge edge.

3. Minority carrier electron diffusion current,In(-xpo) at thespace charge edge.

4. The total diode current I.

5. Roughly, sketch the carrier distribution across thejunction.

6. The reverse saturation current Io.

7. The junction capacitance Cj.

Answer & Explanation Solved by verified expert
4.0 Ratings (586 Votes)
1 The depletion width is given as where is the contactpotential and is    See Answer
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