Consider a slab of p tupe semiconductor with doping of Na= 10^17 cm^-3. Use the following...

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Electrical Engineering

Consider a slab of p tupe semiconductor with doping of Na= 10^17cm^-3. Use the following parameters: Eg=1.1 eV, ni= 10^10 cm^-3,Nc= 10^18  cm^-3, Nv= 10^18  cm^-3. Assumeequal carrier lifetimes for electrons and holes = 1us. Assume equalmonilitoes for electrons and holes = 300cm^2/Vs.

i) what is the equilibrium hole and electronconcentration?

ii) Excess carriers are geneeated with a beneeation eate G=10^20 cm^-3s^-1. what is the excess electron and holedensity?

iii) what is the total hoel and ecteim denaity after thisgeneration process?

iv) what is the enehry band diagram after this generationprocess?

v) what is the diffusion length of electrons and holes?

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