Consider a silicon crystal whose band gap energy is Eg=1.124eVE_g = 1.124 eVEg​=1.124eV and is kept...

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Electrical Engineering

Consider a silicon crystal whose band gap energy isEg=1.124eVE_g = 1.124 eVEg​=1.124eV and is kept at T=300KT = 300KT=300K.

If the Fermi level, EFE_FEF​, is located at precisely the middleof the band gap, what is the probability of finding an electron (orequivalently the probability of a state being occupied) atE=EC+kBTE = E_C + k_BTE=EC​+kB​T?

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