Consider a Si p-n junction at T=300K with the following parameters: Na=5x1017cm-3, Nd=5x1017cm-3 Dn=25 cm2 /s...

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Electrical Engineering

Consider a Si p-n junction at T=300K with the followingparameters: Na=5x1017cm-3, Nd=5x1017cm-3 Dn=25 cm2 /s D P=10 cm2 /sτn=5x10-7 s τP=5x10-7 s. Let the photocurrent density be 20 mA/cm2. (a) Calculate the maximum power delivered to the load assumingthat the fill factor is 0.8. (b) By what factor will the outputpower increase from (a) if the solar intensity is increase by afactor of 10 due to light concentration. Comment on yourresults

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