Consider a Si NPN BJT. Discuss how an change in one of the design parameters affect...

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Electrical Engineering

Consider a Si NPN BJT. Discuss how an change in one ofthe design parameters affect the emitter injection efficiency, thebase transport factor, the common emmiter current gain, and theearly voltage. Assume complete ionization. Further assume thecarrier mobility and the minority carrier lifetime are independentof the change in design parameters.
(a) Increase emitter doping
(b) Increase base doping
(c) Increase base width
(d) Increase collector doping

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3.6 Ratings (477 Votes)

aIncrease emitter doping Emitter is a heavily doped region of the BJT transistor which provides majority carriers into the base region Base region is a thin lightly doped region and is sandwiched between emitter and collector Majority carriers from the emitter pass through the base region and its flow can be externally controlled Emitter injection efficiency in a BJT transistor defines the efficiency of majority carrier injection from emitter It is the ratio of current due to emitter majority carriers to the total emitter current It defines the injection capability See Answer

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