calculate built-in potential, maximum electric field and width of the depletion layer in Si p-n diode...

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Electrical Engineering

calculate built-in potential, maximum electric field and widthof the depletion layer in Si p-n diode doped with donors andacceptors to concentration of 2x10^17cm^-3 and 5x10^16 cm^-3respectively

estimate the maximum voltage which can be safely applied to thediode descibed above

estimate density of reverse current in the diode desribed in topif the diffusion constants and the diffusion lengths of holes andelectrons are about 30cm^2/s and 100mm respectively

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3.8 Ratings (651 Votes)
built in potential for diode is given aswhere KB Boltzmans ConstantT Absolute Tempreturee Electron ChargeVbi 008170 VoltBreakdown Voltage VB electric field strength free electrons gainsufficient kinetic    See Answer
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