C and Si both have same lattice structure having 4 bonding electrons in each However...

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C and Si both have same lattice structure having 4 bonding electrons in each However C is insulator where as Si is intrinsic semiconductor This is because A B C D In case of C the valence band is not completely filled at absolute zero temperature In case of C the conduction band is partly filled even at absolute zero temperature The four bonding electrons in the case of C lie in the second orbit whereas in the case of Si they lie in the third The four bonding electrons in the case of C lie in the third orhit whereas for Si they lie in the fourth orbit

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