(b) P-type doping in deep ultraviolet AlGaN based LEDs suffer from low hole mobility. (i) Sketch a...

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Electrical Engineering

(b) P-type doping in deep ultraviolet AlGaN based LEDs sufferfrom low hole mobility.

(i) Sketch a design ofa tunnel junction for a DUV LED operating at 280 nm.

Explain how the tunnel junctionoperates in a DUV LED.

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The photoelectric properties and physical mechanism of AlGaNbased deep ultraviolet light emitting diodes DUVLEDs with the superlattice ptype doping layer PSL are studied numerically and compared with the Alcomposition 50 conventional ptype layer AlGaNbased DUVLEDs The extraordinary design of DUVLEDs with varied barrier PSL have been investigated by Advance Physical Model of Semiconductor Devices APSYS software Through comparing the internal quantum efficiency IQE light output power    See Answer
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