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  3. a silicon sample is doped with 4.5 × 1017 cm-3

A silicon sample is doped with 4.5 × 1017 cm-3 boron atoms. Assume T= 300 K,...

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Electrical Engineering

A silicon sample is doped with 4.5 × 1017cm-3 boron atoms. Assume T= 300 K, ni = 1.5 x1010 cm-3

What is the hole concentration and electronconcentration?

Answer & Explanation Solved by verified expert
3.6 Ratings (278 Votes)
here is the solution of above problemgiven concentration of donor items Nd 451017cm3intrinsic    See Answer
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