A sample of silicon is doped with donors to a concentration of 10^20 donors m−3 ....

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Physics

A sample of silicon is doped with donors to a concentration of10^20 donors m−3 . Assume all the donors are ionised and that thesample is initially at 300K. (a) What is the concentration of holesin this sample of silicon? (b) Calculate the position of the Fermilevel in this doped sample of silicon. (c) At what temperature willthe intrinsic electron concentration become larger than the donorelectron concentration?

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