A potential difference of 2V is applied between the opposite faces of a Ge crystal...

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A potential difference of 2V is applied between the opposite faces of a Ge crystal plate of area 1 cm and thickness 0 5 mm If the concentration of electrons in Ge is 2 1019 m and mobilities of electrons respectively then the current flowing through the and holes are 0 36 plate will be A 0 25 A m volt sec and 0 14 B 0 45 A m volt sec C 0 56 A D 0 64 A

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