3. The nitridation of a silicon particle can be described by a
simple binary diffusion of...
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3. The nitridation of a silicon particle can be described by asimple binary diffusion of oxygen through the nitride film and afast reaction at the silicon/nitride interface, i.e., adiffusion-controlled process; 2N2+3Si—>Si3N4. A typical model,based on a quasi-steady state assumption, leads to the siliconradius Rf being a function of time (t); initial particle size isR0. For a small silicon particle, the film thickness of not tosmall as compared with the particle size. In such a case, thenitrogen concentration profile may not be linear. With this, pleasederive a model to simulate the consumption of silicon particle (Rf(t)). The solubility of oxygen in the film is CO and the molardensity of the film is Cf .
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This question is related to silicon chemistry The nitridation of a silicon particle is described by a simple binary diffusion of oxygen through the nitride film and a fast reaction at the siliconnitride interface that is a diffusioncontrolled process which is given by the following reaction 2N23Si Si3N4 A typical model based on a quasisteady
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