1)Regarding the UTB(ultra-thin-body) MOSFET, why do they use the raised source/drain technique ? 2)In the FinFET having...

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Physics

1)Regarding the UTB(ultra-thin-body) MOSFET, why dothey use the raised source/drain technique ?
2)In the FinFET having the Fin height,H_fin, and Fin width, W_fin, , What is thechannel width of MOSFET, W?
3)Compare the three FinFET structures; tall, short andnanowire FinFET
4)Explain how FinFET can have shorter L_g,lower I_off, and larger I_on than a single-gateMOSFET.

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3Nanowires and FinFETs are useful dueto their proven robustness against ShortChannel Effects SCE andrelatively simple fabrication Silicon nanowire FinFET SNWFT isbeing considered as the candidate for CMOS scaling beyond the 32 nmnode due to its high performance excellent gate control andenhanced carrier transportation properties Thin and multigatecontrolled body provide FinFETs a superior shortchannel effectcontrol electrostatic shielding from the body bias relaxingchannel doping or pocket implants commonly needed in planartechnologies to avoid threshold voltage VTH rolloff Adequatedevice See Answer

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