13 A silicon p n junction diode has the following parameters N 2 10 8...

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13 A silicon p n junction diode has the following parameters N 2 10 8 cm x N 2 10 6 cm T tp 2 x 10 6 s D 25 cm s and Dp 8 cm Tn Tp s A light source is incident only on the depletion region producing a generation current density of Jgen 50 mA cm 2 The diode is open circuited The generation current density forward biases the junction inducing a forward bias current in the opposite direction to the generation current A steady state condition is reached when the gen eration current density and forward bias current density are equal in magnitude What is the induced forward bias voltage at this steady state condition

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