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1. Explain impact ionization and zener/tunneling breakdown. Which one is likely to cause breakdown in following: a....

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Electrical Engineering

1. Explain impact ionization and zener/tunneling breakdown.Which one is likely to cause breakdown in following:

a. GaN Schottky barrier diode with barrier height 1ev.

b. Heavily doped P+/N+ GaAs diode.

c. Heavily doped P+/lightly doped N-Si diode.

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